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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166/D The RF MOSFET Line RF Power Field Effect Transistors * Low Crss -- 4.5 pF @ VDS = 28 V N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 30 - 500 MHz. * MRF166C -- Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55% * Optional 4-Lead Flange Package (MRF166) * Replacement for Industry Standards such as MRF136, DV2820, BLF244, SD1902, and ST1001 * 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR * Facilitates Manual Gain Control, ALC and Modulation Techniques * Excellent Thermal Stability, Ideally Suited for Class A Operation * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. D MRF166 MRF166C 20 W, 500 MHz MOSFET BROADBAND RF POWER FETs CASE 211-07, STYLE 2 G S CASE 319-07, STYLE 3 MAXIMUM RATINGS Rating Drain-Gate Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate Above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 40 4.0 70 0.4 - 65 to 150 200 Unit Vdc Vdc Adc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 2.5 Unit C/W NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF166 MRF166C 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 V, ID = 5.0 mA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) Gate-Source Leakage Current (VGS = 40 V, VDS = 0 V) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1.0 1.0 V mA A ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 25 mA) Forward Transconductance (VDS = 10 V, ID = 1.5 A) VGS(th) gfs 1.0 600 3.0 800 6.0 -- V mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Ciss Coss Crss -- -- -- 30 35 4.5 -- -- -- pF pF pF FUNCTIONAL CHARACTERISTICS Noise Figure (VDD = 28 V, f = 30 MHz, IDQ = 50 mA) MRF166C Common Source Power Gain (VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA) Drain Efficiency (VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA) Electrical Ruggedness (VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA, Load VSWR 30:1 at All Phase Angles) MRF166 Common Source Power Gain (VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA) Drain Efficiency (VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA) Electrical Ruggedness (VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA, Load VSWR 30:1 at All Phase Angles) Series Equivalent Input Impedance (VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA) Series Equivalent Output Impedance (VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA) Gps 15 55 19 65 -- -- dB % Gps 14 50 17 55 -- -- dB % NF -- 2.5 -- dB No Degradation in Output Power No Degradation in Output Power Zin Zout -- -- 3.99 - j12.2 14.15 - j6.51 -- -- Ohms Ohms MRF166 MRF166C 2 MOTOROLA RF DEVICE DATA R2 R3 C4 C13 + - D1 C8 RFC2 R4 C9 R1 RF INPUT Z1 C1 C2 C3 Z2 L1 Z3 L2 Z4 D.U.T. C10 RFC1 C11 + - C12 VDD = 28 V + Vdc - Z5 Z6 Z7 RF OUTPUT C7 C5 C6 C1, C7 -- 270 pF Chip Capacitor C2, C6 -- Johanson Trimmer Capacitor, 2 - 20 pF C3 -- 21 pF Mini Unelco C4, C8, C9 -- 0.01 F C5 -- 18 pF Mini Unelco C10, C11 -- 680 pF Feed Through C12, C13 -- 50 F, 50 V D1 -- 1N5925A Motorola Zener Board Material -- Teflon fiberglass 2 oz. Copper clad both sides, r = 2.55 0.060 Dielectric Thickness L1 -- #18 AWG, 2 Turns, 0.25 ID 0.15 Wide L2 -- #18 AWG Hairpin 0.7 long, bend into hairpin RFC1 -- Ferroxcube VK200-19/4B RFC2 -- 18 Turns #18 AWG Enameled, 0.3 ID R1 -- 220 1/2 Watt R2 -- 1.8 k 1/4 Watt R3 -- 10 k, 10 Turns Bourns R4 -- 10 k 1/4 Watt Z1 -- Microstrip Line 0.150 wide, 0.420 long Z2 -- Microstrip Line 0.150 wide, 0.350 long Z3 -- Microstrip Line 0.150 wide, 0.350 long Z4 -- Microstrip Line 0.150 wide, 0.450 long Z5 -- Microstrip Line 0.150 wide, 1.1 long Z6 -- Microstrip Line 0.150 wide, 0.650 long Z7 -- Microstrip Line 0.150 wide, 0.200 long Figure 1. MRF166C 400 MHz Test Circuit C10 C9 RFC2 R4 C6 R3 RF INPUT L1 C1 C2 D.U.T. C3 C4 C5 RF OUTPUT RFC1 C11 C12 + - VDD = 28 V + C13 Vdc - R2 R1 C7 C8 + - D1 L2 L3 C1, C2 -- 406 ARCO C3 -- 39 pF ATC 100 Mil Chip Cap C4 -- 403 ARCO C5 -- 470 pF ATC 100 Mil Chip Cap C6, C7, C9, C13 -- 0.01 F C8, C12 -- 50 F, 50 V C10, C11 -- 680 pF Feed Through D1 -- 1N5925A Motorola Zener L1 -- #20 AWG 2 Turns, 0.235 ID, 0.10 OD L2 -- #18 AWG 2 Turns, 0.225 ID, 0.22 OD L3 -- #18 AWG 2 Turns, 0.325 ID, 0.13 OD RFC1 -- Ferroxcube VK200-19/4B RFC2 -- 18 Turns #18 AWG Enameled, 0.3 ID R1 -- 10 k, 10 Turn Bourns R2 -- 1.8 k 1/4 Watt R3 -- 120 1/2 Watt R4 -- 10 k 1/4 Watt Board Material -- 0.062 G10, 2 oz Cu Clad Double Sided Figure 2. MRF166 150 MHz Test Circuit MOTOROLA RF DEVICE DATA MRF166 MRF166C 3 TYPICAL CHARACTERISTICS 100 I D, DRAIN CURRENT (AMPS) 50 C, CAPACITANCE (pF) Coss Ciss 10 TC = 25C 20 10 5 VGS = 0 V f = 1 MHz 0 1 Crss 2 1 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 25 0.1 0 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100 Figure 3. Capacitance versus Drain-Source Voltage Figure 4. DC Safe Operating Area MRF166 35 Po, OUTPUT POWER (WATTS) Po, OUTPUT POWER (WATTS) 30 25 20 15 10 5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Pin, INPUT POWER (WATTS) 0.7 0.8 VDS = 28 V IDQ = 25 mA f = 150 MHz 32 28 24 0.3 W 20 16 12 8 4 0 12 14 16 18 20 22 24 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 26 28 0.1 W f = 150 MHz IDQ = 25 mA Pin = 0.6 W Figure 5. Output Power versus Input Power Figure 6. Output Power versus Voltage 16 14 12 10 8 6 4 2 0 0 0.1 0.2 VDS = 13.5 V IDQ = 25 mA 0.3 0.4 0.5 0.6 Pin, INPUT POWER (WATTS) 0.7 0.8 f = 150 MHz Po, OUTPUT POWER (WATTS) Figure 7. Output Power versus Input Power MRF166 MRF166C 4 MOTOROLA RF DEVICE DATA MRF166C 35 Po, OUTPUT POWER (WATTS) 30 25 20 500 MHz 15 10 5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Pin, INPUT POWER (WATTS) 0.7 0.8 VDS = 28 V IDQ = 100 mA f = 400 MHz Po, OUTPUT POWER (WATTS) 16 14 12 10 8 6 4 2 0 0 0.1 0.2 VDS = 13.5 V IDQ = 100 mA 0.3 0.4 0.5 0.6 Pin, INPUT POWER (WATTS) 0.7 0.8 f = 400 MHz Figure 8. Output Power versus Input Power Figure 9. Output Power versus Input Power 32 28 Po, OUTPUT POWER (WATTS) 24 20 16 12 8 4 0 12 14 16 18 20 22 24 VDS, DRAIN-SOURCE (VOLTS) 26 28 0.2 W 0.4 W f = 400 MHz IDQ = 100 mA Pin = 0.8 W Figure 10. Output Power versus Voltage 400 f = 500 MHz f MHz VDD = 28 V, IDQ = 100 mA Zin OHMS (Pout = 20 W) 100 200 400 500 11.0 - j21.0 4.20 - j12.6 1.90 - j5.80 1.50 - j4.10 8.50 - j10.0 6.00 - j9.00 4.50 - j6.70 4.20 - j5.40 ZOL* OHMS 200 Zin 100 f = 500 MHz 400 200 ZOL* 100 Zo = 50 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 11. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF166 MRF166C 5 MRF166 MRF166C 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS A U M Q 1 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M DIM A B C D E H J K M Q R S U STYLE 2: PIN 1. 2. 3. 4. SEATING PLANE R 2 3 B S D K INCHES MIN MAX 0.960 0.990 0.370 0.390 0.229 0.281 0.215 0.235 0.085 0.105 0.150 0.108 0.004 0.006 0.395 0.405 40 _ 50 _ 0.113 0.130 0.245 0.255 0.790 0.810 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 9.40 9.90 5.82 7.13 5.47 5.96 2.16 2.66 3.81 4.57 0.11 0.15 10.04 10.28 40 _ 50 _ 2.88 3.30 6.23 6.47 20.07 20.57 18.29 18.54 J H C E SOURCE GATE SOURCE DRAIN CASE 211-07 ISSUE N IDENTIFICATION NOTCH 6 -AL 5 4 Q 2 PL 0.15 (0.006) M TA M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. -N1 2 3 K F D 2 PL 0.38 (0.015) M B J H C E -TSEATING PLANE TA M M N M M 0.38 (0.015) TA N M DIM A B C D E F H J K L N Q INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 STYLE 3: PIN 1. 2. 3. 4. 5. 6. SOURCE (COMMON) GATE (INPUT) SOURCE (COMMON) SOURCE (COMMON) DRAIN (OUTPUT) SOURCE (COMMON) CASE 319-07 ISSUE M MOTOROLA RF DEVICE DATA MRF166 MRF166C 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF166 MRF166C 8 *MRF166/D* MRF166/D MOTOROLA RF DEVICE DATA |
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